Constructing Spacecraft Components Using Additive Manufacturing and Atomic Layer Deposition: First Steps for Integrated Electric Circuitry

Atomic layer deposition: an overview.

Atomic Layer Deposition of TiO

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Atomic layer deposition of GaN using GaCl3 and NH3

GaN films were grown on Si 100 substrate by atomic layer deposition ALD using GaCl3 and NH3. Growth conditions were identified for which the growth rate exhibited a plateau at 2.0 Å /cycle, consistent with self-limiting adsorption. A relatively wide temperature window 500–750 °C for ALD growth mode was also established for one flow sequence schedule. In this limit, both the 0002 and 101̄1 orient...

Atomic Layer Deposition of Fe2O3 Using Ferrocene and Ozone

Growing interest in Fe2O3 as a light harvesting layer in solar energy conversion devices stems from its unique combination of stability, nontoxicity, and exceptionally low material cost. Unfortunately, the known methods for conformally coating high aspect ratio structures with Fe2O3 leave a glaring gap in the technologically relevant temperature range of 170-350 C. Here, we elucidate a self-lim...

An Overview of Additive Manufacturing of Titanium Components by Directed Energy Deposition: Microstructure and Mechanical Properties

The directed energy deposition (DED) process can be employed to build net shape components or prototypes starting from powder or wires, through a layer-by-layer process. This process provides an opportunity to fabricate complex shaped and functionally graded parts that can be utilized in different engineering applications. DED uses a laser as a focused heat source to melt the in-situ delivered ...